Title:
INFRARED SENSOR
Document Type and Number:
WIPO Patent Application WO/2022/138248
Kind Code:
A1
Abstract:
An infrared sensor (1a) according to the present disclosure comprises a base substrate (10), an infrared receiving unit (20), and a beam (30). The beam (30) is connected to the infrared receiving unit (20) at an isolating portion (31). The beam (30) has a p-type site (30p) containing a p-type semiconductor and an n-type site (30n) containing an n-type semiconductor. The p-type site (30p) has a first three-dimensional structure (35a) that includes a plurality of first recessed portions (32a) and a first solid portion (34a) formed between the first recessed portions (32a), wherein the minimum dimension of the first solid portion (34a) in a plan view is less than or equal to 100 nanometers. The n-type site (30n) has a third three-dimensional structure (35b) that includes a plurality of second recessed portions (32b) and a second solid portion (34b) formed between the second recessed portions (32b), wherein the minimum dimension of the second solid portion (34b) in a plan view is less than or equal to 100 nanometers.
Inventors:
FUJIKANE MASAKI
TAKAHASHI KOUHEI
TAMBO NAOKI
NAITO YASUYUKI
TAKAHASHI KOUHEI
TAMBO NAOKI
NAITO YASUYUKI
Application Number:
PCT/JP2021/045643
Publication Date:
June 30, 2022
Filing Date:
December 10, 2021
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
G01J1/02; H01L35/32; G01J5/12; G01J5/20
Domestic Patent References:
| WO2019225058A1 | 2019-11-28 | |||
| WO2020174731A1 | 2020-09-03 | |||
| WO2020174732A1 | 2020-09-03 |
Foreign References:
| US10663350B1 | 2020-05-26 |
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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