Title:
INSULATED-GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THERFOR
Document Type and Number:
WIPO Patent Application WO/2021/017368
Kind Code:
A1
Abstract:
Disclosed are an insulated-gate bipolar transistor and a manufacturing method therefor. The insulated-gate bipolar transistor comprises: a drift region, the drift region comprising a first doped region and a second doped region of a same doping type, where the doping concentration of the first doped region is greater than the doping concentration of the second doped region; a body region, the body region different from the drift region in terms of the doping type comprising a first part and a second part. The first part is located between the first doped region and a transmitting electrode region and is in contact with the first doped region; the second part is located between the second doped region and a gate electrode region and is in contact with the second doped region.
Inventors:
LIU LISHU (CN)
FENG YUXIANG (CN)
FENG YUXIANG (CN)
Application Number:
PCT/CN2019/124843
Publication Date:
February 04, 2021
Filing Date:
December 12, 2019
Export Citation:
Assignee:
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENTER CO LTD (CN)
MIDEA GROUP CO LTD (CN)
MIDEA GROUP CO LTD (CN)
International Classes:
H01L29/739
Foreign References:
| CN107293579A | 2017-10-24 | |||
| CN107293579A | 2017-10-24 | |||
| CN109192771A | 2019-01-11 | |||
| CN103477437A | 2013-12-25 | |||
| US20080157117A1 | 2008-07-03 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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