Title:
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/017369
Kind Code:
A1
Abstract:
Disclosed are an insulated gate bipolar transistor and a manufacturing method therefor. The insulated gate bipolar transistor comprises: a body region that is located between a drift region and an emitter region and in contact with the drift region, the emitter region, an emitter metal and a gate region; the emitter metal that is located above the body region and in contact with the emitter region; the emitter region located between the emitter metal and the gate region, wherein the width of a contact interface between the bottom of the emitter region and the body region is less than the width of the top of the emitter region; and the gate region that is located above the drift region and in contact with the emitter region.
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Inventors:
LIU LISHU (CN)
FENG YUXIANG (CN)
FENG YUXIANG (CN)
Application Number:
PCT/CN2019/124857
Publication Date:
February 04, 2021
Filing Date:
December 12, 2019
Export Citation:
Assignee:
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENTER CO LTD (CN)
MIDEA GROUP CO LTD (CN)
MIDEA GROUP CO LTD (CN)
International Classes:
H01L29/739
Foreign References:
| CN208077983U | 2018-11-09 | |||
| CN107293579A | 2017-10-24 | |||
| CN102779842A | 2012-11-14 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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