Title:
INSULATED GATE BIPOLAR TRANSISTOR, POWER MODULE, AND HOUSEHOLD ELECTRIC APPLIANCE
Document Type and Number:
WIPO Patent Application WO/2021/077579
Kind Code:
A1
Abstract:
Disclosed are an insulated gate bipolar transistor, a power module, and a household electric appliance. The transistor comprises a semiconductor substrate. The semiconductor substrate comprises: a first-type doped collector region, wherein the collector region comprises a bump region; a second-type doped first drift region and a second-type doped second drift region, wherein the first drift region and the second drift region are located on the side of the collector region having the bump region, and the first drift region has a profile matching the bump region, such that the second drift region is not in contact with the bump region, and the doping concentration of the first drift region is greater than the doping concentration of the second drift region; and a first active region and a second active region oppositely formed on two ends of the second drift region. According to the means, the conduction resistance of a drift region can be reduced in the present application.
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Inventors:
LIU LISHU (CN)
FENG YUXIANG (CN)
FENG YUXIANG (CN)
Application Number:
PCT/CN2019/125921
Publication Date:
April 29, 2021
Filing Date:
December 17, 2019
Export Citation:
Assignee:
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENTER CO LTD (CN)
MIDEA GROUP CO LTD (CN)
MIDEA GROUP CO LTD (CN)
International Classes:
H01L29/06; H01L29/739; H01L29/08
Foreign References:
| CN102386220A | 2012-03-21 | |||
| CN205428937U | 2016-08-03 | |||
| CN102738238A | 2012-10-17 | |||
| CN105789290A | 2016-07-20 | |||
| CN104701355A | 2015-06-10 | |||
| CN103681817A | 2014-03-26 | |||
| CN103703566A | 2014-04-02 | |||
| CN201911013226A | 2019-10-23 |
Other References:
See also references of EP 4024473A4
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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