Title:
ION IMPLANTATION METHOD, AND ION IMPLANTATION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/181701
Kind Code:
A1
Abstract:
This ion implantation method comprises: acquiring a measured value of a neutron dose rate measured at a predetermined position in an ion implantation apparatus when a first ion beam containing a high-energy first ion species is transported along a beam line in the ion implantation apparatus; determining whether the measured value exceeds a predetermined threshold value; transporting, along the beam line, a second ion beam containing a second ion species having a mass number larger than that of the first ion species, when the measured value exceeds the predetermined threshold value; and irradiating the wafer with the first ion beam transported along the beam line after the second ion beam has been transported.
Inventors:
MATSUSHITA HIROSHI (JP)
ISHIKAWA MASAKI (JP)
NAKAJIMA TSUYOSHI (JP)
YAGITA TAKANORI (JP)
ISHIKAWA MASAKI (JP)
NAKAJIMA TSUYOSHI (JP)
YAGITA TAKANORI (JP)
Application Number:
PCT/JP2023/004753
Publication Date:
September 28, 2023
Filing Date:
February 13, 2023
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES ION TECH CO LTD (JP)
International Classes:
H01J37/147; H01J37/317; H01L21/265
Foreign References:
| JP2020115451A | 2020-07-30 | |||
| JP2018206504A | 2018-12-27 | |||
| JPH09139186A | 1997-05-27 |
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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