Title:
ION IMPLANTATION SYSTEMS AND METHODS UTILIZING A DOWNSTREAM GAS SOURCE
Document Type and Number:
WIPO Patent Application WO2003036678
Kind Code:
A3
Abstract:
Systems and methods that neutralize ion beams in implantation processes are provided. The methods involve introducing a gas into the ion beam. The gas, for example, can be introduced into a region defined by an electrode through which the ion beam travels. The gas increases the generation of electrons in the beam which, in turn, neutralizes the beam. The neutralized beam has a reduced tendency to diverge (i. e., greater beam stability) during transport which can increase the beam current delivered to the wafer and implant uniformity, amongst other advantages. The systems and methods are particularly useful in limiting the divergence of low energy ion beams.
Inventors:
GAMMEL GEORGE
DANIEL PAUL ALLAN
DANIEL PAUL ALLAN
Application Number:
PCT/US2002/034347
Publication Date:
April 15, 2004
Filing Date:
October 25, 2002
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
International Classes:
H01J37/08; (IPC1-7): H01J37/317; H01J37/02; H01J37/08
Domestic Patent References:
| WO1999003125A1 | 1999-01-21 |
Foreign References:
| US5814819A | 1998-09-29 |
Other References:
CURELLO G ET AL: "Charge exchange in Eaton's NV-8250 medium current ion implanter", 1998 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY. PROCEEDINGS (CAT. NO.98EX144), 1998 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY. PROCEEDINGS. ION IMPLANTATION TECHNOLOGY - 98, KYOTO, JAPAN, 22-26 JUNE 1998, 1998, Piscataway, NJ, USA, IEEE, USA, pages 543 - 545 vol.1, XP002247112, ISBN: 0-7803-4538-X
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