Title:
JUNCTION BARRIER SCHOTTKY DIODE
Document Type and Number:
WIPO Patent Application WO/2023/181588
Kind Code:
A1
Abstract:
[Problem] To lower the on-resistance of a junction barrier Schottky diode in which a gallium oxide is used. [Solution] A junction barrier Schottky diode 1 comprises: a semiconductor substrate 20 and a drift layer 30 that are formed from a gallium oxide; an anode electrode 40 and a p-type semiconductor layer 60 that are in contact with the drift layer 30; an n-type semiconductor layer 70 that is in contact with the anode electrode 40 and the drift layer 30; a metal layer 80 that is provided between the n-type semiconductor layer 70 and the p-type semiconductor layer 60; and a cathode electrode 50 that is in contact with the semiconductor substrate 20. The on-resistance is thus lowered in the lead up to the forward current flowing to the p-n junction section since the n-type semiconductor layer 70 functions as a current path.
Inventors:
ARIMA JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
FUJITA MINORU (JP)
KAWASAKI KATSUMI (JP)
HIRABAYASHI JUN (JP)
Application Number:
PCT/JP2023/000366
Publication Date:
September 28, 2023
Filing Date:
January 11, 2023
Export Citation:
Assignee:
TDK CORP (JP)
International Classes:
H01L29/872; H01L29/47; H01L29/861; H01L29/868
Domestic Patent References:
| WO2019003861A1 | 2019-01-03 | |||
| WO2020013242A1 | 2020-01-16 |
Foreign References:
| JP2009224603A | 2009-10-01 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
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