Title:
LAMINATE INCLUDING SINGLE CRYSTAL DIAMOND SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/139147
Kind Code:
A1
Abstract:
Provided is a novel laminate effectively using bonding boundaries, despite using a single crystal diamond substrate that has bonding boundaries. The laminate has at least a conductor drift layer laminated upon a single crystal diamond substrate having a bonding boundary section. In a Raman spectrum at a laser excitation wavelength of 785 nm, the bonding boundary section of the single crystal diamond substrate exhibits a wider full width at half maximum for a peak in the vicinity of 1,332 cm–1 caused by the diamond than the full width at half maximum for a peak at a section different from the bonding boundary section. The width of the bonding boundary section is at least 200 µm and the semiconductor diamond layer is laminated upon at least the bonding boundary section.
Inventors:
OHMAGARI SHINYA (JP)
YAMADA HIDEAKI (JP)
UMEZAWA HITOSHI (JP)
TSUBOUCHI NOBUTERU (JP)
CHAYAHARA AKIYOSHI (JP)
MOKUNO YOSHIAKI (JP)
SEKI AKINORI (JP)
KAWAI FUMIAKI (JP)
SAITOH HIROAKI (JP)
YAMADA HIDEAKI (JP)
UMEZAWA HITOSHI (JP)
TSUBOUCHI NOBUTERU (JP)
CHAYAHARA AKIYOSHI (JP)
MOKUNO YOSHIAKI (JP)
SEKI AKINORI (JP)
KAWAI FUMIAKI (JP)
SAITOH HIROAKI (JP)
Application Number:
PCT/JP2019/000772
Publication Date:
July 18, 2019
Filing Date:
January 11, 2019
Export Citation:
Assignee:
AIST (JP)
International Classes:
H01L21/20; C23C16/01; C23C16/27; C30B25/20; C30B29/04; H01L21/205; H01L21/265; H01L29/47; H01L29/872
Domestic Patent References:
| WO2011074599A1 | 2011-06-23 | |||
| WO2011074599A1 | 2011-06-23 |
Foreign References:
| JP2003068592A | 2003-03-07 | |||
| JP2016522988A | 2016-08-04 | |||
| JP2016119428A | 2016-06-30 | |||
| JP2015067516A | 2015-04-13 | |||
| JPH0748198A | 1995-02-21 | |||
| JP2009502705A | 2009-01-29 | |||
| JPS5621994B2 | 1981-05-22 | |||
| JP4849691B2 | 2012-01-11 | |||
| JP2015067516A | 2015-04-13 | |||
| JP2015067517A | 2015-04-13 |
Other References:
YAMADA, HIDEAKI ET AL.: "Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size", DIAMOND & RELATED MATERIALS, vol. 24, 29 September 2011 (2011-09-29), pages 29 - 33, XP055626538
SHU, GUOYANG ET AL.: "Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy", JOURNAL OF CRYSTAL GROWTH, vol. 463, 31 January 2017 (2017-01-31), pages 19 - 26, XP029942519, DOI: 10.1016/j.jcrysgro.2017.01.045
Y. MOKUNOA. CHAYAHARAH. YAMADAN. TSUBOUCHI, DIAMOND AND RELATED MATERIALS, vol. 18, 2009, pages 1258
MAEDAWATANABEANDOSUZUKISAWABE: "The 19th Diamond Symposium", SUMMARY, vol. 50, 2005
YAMADA ET AL., DIAMOND RELAT. MATER., vol. 24, 2012, pages 29
H. YAMADAA. CHAYAHARAY. MOKUNO: "Effects of intentionally introduced nitrogen and substrate temperature on growth of diamond bulk single crystals", JPN. J. APPL. PHYS., vol. 55, 2016, pages 01AC07, Retrieved from the Internet
Y. KATOH. UMEZAWAS. I. SHIKATAT. TERAJI: "Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond", DIAM. RELAT. MATER, vol. 23, 2012, pages 109 - 111, XP028468045, DOI: 10.1016/j.diamond.2012.01.024
S. OHMAGARIT. TERAJIY. KOIDE: "Non-destructive detection of killer defects of diamond Schottky barrier diodes", J. APPL. PHYS., vol. 110, 2011, pages 5 - 8
H. UMEZAWAN. TOKUDAM. OGURAS.G. RIS. ICHI SHIKATA: "Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling", DIAM. RELAT. MATER, vol. 15, 2006, pages 1949 - 1953
YAMADA ET AL., DIAMOND RELAT. MATER, vol. 24, 2012, pages 29
SHU, GUOYANG ET AL.: "Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy", JOURNAL OF CRYSTAL GROWTH, vol. 463, 31 January 2017 (2017-01-31), pages 19 - 26, XP029942519, DOI: 10.1016/j.jcrysgro.2017.01.045
Y. MOKUNOA. CHAYAHARAH. YAMADAN. TSUBOUCHI, DIAMOND AND RELATED MATERIALS, vol. 18, 2009, pages 1258
MAEDAWATANABEANDOSUZUKISAWABE: "The 19th Diamond Symposium", SUMMARY, vol. 50, 2005
YAMADA ET AL., DIAMOND RELAT. MATER., vol. 24, 2012, pages 29
H. YAMADAA. CHAYAHARAY. MOKUNO: "Effects of intentionally introduced nitrogen and substrate temperature on growth of diamond bulk single crystals", JPN. J. APPL. PHYS., vol. 55, 2016, pages 01AC07, Retrieved from the Internet
Y. KATOH. UMEZAWAS. I. SHIKATAT. TERAJI: "Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond", DIAM. RELAT. MATER, vol. 23, 2012, pages 109 - 111, XP028468045, DOI: 10.1016/j.diamond.2012.01.024
S. OHMAGARIT. TERAJIY. KOIDE: "Non-destructive detection of killer defects of diamond Schottky barrier diodes", J. APPL. PHYS., vol. 110, 2011, pages 5 - 8
H. UMEZAWAN. TOKUDAM. OGURAS.G. RIS. ICHI SHIKATA: "Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling", DIAM. RELAT. MATER, vol. 15, 2006, pages 1949 - 1953
YAMADA ET AL., DIAMOND RELAT. MATER, vol. 24, 2012, pages 29
Attorney, Agent or Firm:
TANAKA, Junya et al. (JP)
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