Title:
LAMINATE, SINGLE CRYSTAL DIAMOND SUBSTRATE AND METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2022/044946
Kind Code:
A1
Abstract:
Provided are a laminate that can be produced with high quality and low cost, a single crystal diamond substrate and a method of producing the same. The laminate, which is a laminate of a ruthenium film 3 and a diamond film 4, and the single crystal diamond substrate 1 are each provided with the ruthenium film 3 and the diamond film 4 heteroepitaxially grown on the ruthenium film 3. The surface of the ruthenium film 3 is the (0001) plane and the surface of the diamond film 4 is the (111) plane. Ruthenium is employed as a base film on which the diamond film 4 is heteroepitaxially grown.
Inventors:
KAWARADA HIROSHI (JP)
FEI WENXI (JP)
MORISHITA AOI (JP)
FEI WENXI (JP)
MORISHITA AOI (JP)
Application Number:
PCT/JP2021/030346
Publication Date:
March 03, 2022
Filing Date:
August 19, 2021
Export Citation:
Assignee:
UNIV WASEDA (JP)
International Classes:
C30B29/04; B32B15/06; C01B32/26; C23C16/27
Foreign References:
| JPH06212428A | 1994-08-02 | |||
| JP2020090408A | 2020-06-11 | |||
| US20070084398A1 | 2007-04-19 | |||
| JP2016145144A | 2016-08-12 | |||
| JP2005219962A | 2005-08-18 | |||
| US20160208413A1 | 2016-07-21 |
Other References:
FEI, WENXI ET AL.: "Local initial heteroepitaxial growth of diamond(l 11) on Ru(0001)/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition", APPLIED PHYSICS LETTERS, vol. 117, no. 11, 18 September 2020 (2020-09-18), XP012250155, DOI: 10.1063/5.0008287
Attorney, Agent or Firm:
DORAIT IP LAW FIRM (JP)
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