Title:
LAMINATE STRUCTURE, ELEMENT, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/048767
Kind Code:
A1
Abstract:
[Problem] To provide a crystal having excellent crystallinity and a laminate structure, and an element, an electronic device, an electronic apparatus, and a system using same. [Solution] Provided is a laminate structure in which an epitaxial film, which is composed of a conductive metal oxide, is provided on a buffer layer directly or with another layer therebetween, wherein, by means of the laminate structure including a crystalline film containing an oxide of Hf and/or Zr, the buffer layer is used to manufacture a Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS), a metal-semiconductor electric field effect transistor (MESFET), a high-electron-mobility transistor (HEMT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction electric field effect transistor (JFET), an insulated gate bipolar transistor (IGBT), a light emitting diode (LED), or a semiconductor device composed of the combination of same, etc.
Inventors:
KIJIMA TAKESHI (JP)
Application Number:
PCT/JP2023/032026
Publication Date:
March 07, 2024
Filing Date:
August 31, 2023
Export Citation:
Assignee:
GAIANIXX INC (JP)
International Classes:
C30B29/16; C23C14/08; H01L21/20; H01L21/337; H01L21/338; H01L29/06; H01L29/12; H01L29/739; H01L29/778; H01L29/78; H01L29/808; H01L29/812; H01L29/861; H01L29/868; H01L29/872; H01L33/12; H10N30/20; H10N30/30; H10N30/853
Domestic Patent References:
| WO2022168800A1 | 2022-08-11 | |||
| WO2018216227A1 | 2018-11-29 |
Foreign References:
| JP2023109680A | 2023-08-08 |
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