Title:
CRYSTAL, MULTILAYER STRUCTURE, ELEMENT, ELECTRONIC DEVICE, ELECTRONIC APPLIANCE, AND SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/048766
Kind Code:
A1
Abstract:
[Problem] To provide a crystal having excellent crystallinity, a multilayer structure, and an element, an electronic device, an electronic appliance, and a system which are obtained using these. [Solution] An electroconductive crystal which includes a crystalline nitride, wherein the crystalline nitride includes a nitride of Hf and Zr. The crystal is used to produce, for example, a Schottky barrier diode (SBD), a junction barrier Schottky diode (JBS), a metal-semiconductor field-effect transistor (MESFET), a high-electron mobility transistor (HEMT), a metal-oxide-film-semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction-type field-effect transistor (JFET), an insulated-gate bipolar transistor (IGBT), a light-emitting diode (LED), or a semiconductor device comprising a combination of these.
Inventors:
KIJIMA TAKESHI (JP)
Application Number:
PCT/JP2023/032025
Publication Date:
March 07, 2024
Filing Date:
August 31, 2023
Export Citation:
Assignee:
GAIANIXX INC (JP)
International Classes:
C23C14/06; C30B29/38; H01L21/20; H01L21/336; H01L21/337; H01L21/338; H01L29/06; H01L29/12; H01L29/47; H01L29/739; H01L29/778; H01L29/78; H01L29/808; H01L29/812; H01L29/861; H01L29/868; H01L29/872; H01L33/12; H10N30/076; H10N30/079; H10N30/853
Foreign References:
| JP2003273350A | 2003-09-26 | |||
| JP2009238783A | 2009-10-15 | |||
| CN102828251A | 2012-12-19 | |||
| JP2008270749A | 2008-11-06 | |||
| JP2014192650A | 2014-10-06 |
Download PDF: