LAMINATION STRUCTURE, MAGNETORESISTIVE ELEMENT USING SAME, AND LAMINATION STRUCTURE MANUFACTURING METHOD - NATIONAL INSTITUTES FOR QUANTUM AND RADIOLOGICAL SCIENCE AND TECH

Title:

LAMINATION STRUCTURE, MAGNETORESISTIVE ELEMENT USING SAME, AND LAMINATION STRUCTURE MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2021/095468

Kind Code:

A1

Abstract:

This lamination structure achieves both high spin polarization rate and low electric resistance. This lamination structure has: a Heusler alloy; and graphene in direct contact with the Heusler alloy on a surface of the Heusler alloy. This lamination structure is manufactured by forming a Heusler alloy thin film on a substrate under vacuum and causing graphene to grow on the surface of the Heusler alloy thin film while vacuum is maintained.

Inventors:

LI SONGTIAN (JP)
SAKAI SEIJI (JP)

Application Number:

PCT/JP2020/039569

Publication Date:

May 20, 2021

Filing Date:

October 21, 2020

Export Citation:

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Assignee:

NATIONAL INSTITUTES FOR QUANTUM AND RADIOLOGICAL SCIENCE AND TECH (JP)

International Classes:

H01F10/32; H01F1/03; H01F41/32; H01L29/82; H01L43/08

Domestic Patent References:

WO2010029702A1

2010-03-18

Foreign References:

US20090321860A1	2009-12-31
US20180240964A1	2018-08-23
US20170242083A1	2017-08-24
JP2006319234A	2006-11-24