Title:
LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/145176
Kind Code:
A1
Abstract:
This laser annealing device causes a CW laser light to move unidirectionally relative to a noncrystalline silicon film, causing the noncrystalline silicon film to undergo lateral crystal growth to form a crystallized silicon film, wherein the optics comprise a beam shaping part for shaping the CW laser light into a laser beam forming a ring of condensed light, and a beam splitting part having a reflective surface for splitting and reflecting the shaped circular laser beam to generate a semicircular laser beam. The optics irradiate the semicircular laser beam onto a surface of the noncrystalline silicon film to be irradiated in such a manner that the outer peripheral edge of the semicircular laser beam is oriented in the relative moving direction of the laser beam.
Inventors:
SAWAI TAKUYA (JP)
Application Number:
PCT/JP2020/048145
Publication Date:
July 22, 2021
Filing Date:
December 23, 2020
Export Citation:
Assignee:
V TECH CO LTD (JP)
International Classes:
B23K26/354; H01L21/20; H01L21/268
Foreign References:
| JPS6247114A | 1987-02-28 | |||
| JPS5952831A | 1984-03-27 | |||
| US4406709A | 1983-09-27 | |||
| JPH01230221A | 1989-09-13 | |||
| JPS6319809A | 1988-01-27 | |||
| JPH0330317A | 1991-02-08 | |||
| JP2003121895A | 2003-04-23 | |||
| JP2019098373A | 2019-06-24 | |||
| JP2019063837A | 2019-04-25 | |||
| JPH01165187A | 1989-06-29 |
Attorney, Agent or Firm:
NISSAY INTERNATIONAL PATENT OFFICE (JP)
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