LASER DOPING DEVICE AND LASER DOPING METHOD

Title:

LASER DOPING DEVICE AND LASER DOPING METHOD

Document Type and Number:

WIPO Patent Application WO/2016/151723

Kind Code:

A1

Abstract:

This laser doping device, which performs doping by irradiating a predetermined region of a semiconductor material with a pulsed laser beam, may be provided with: a solution supply system that supplies the predetermined region with a dopant-containing solution; and a laser system that includes at least one laser device that outputs a pulsed laser beam that passes through the dopant-containing solution, and a pulse time waveform adjustment device that adjusts the pulse time waveform of the pulsed laser beam.

Inventors:

OHKUBO TOMOYUKI (JP)
IKENOUE HIROSHI (JP)
IKEDA AKIHIRO (JP)
ASANO TANEMASA (JP)
WAKABAYASHI OSAMU (JP)

Application Number:

PCT/JP2015/058709

Publication Date:

September 29, 2016

Filing Date:

March 23, 2015

Export Citation:

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Assignee:

UNIV KYUSHU (JP)
GIGAPHOTON INC (JP)

International Classes:

H01L21/265; H01L21/22

Domestic Patent References:

WO2014156818A1

2014-10-02

Foreign References:

JP2010525554A	2010-07-22
JP2007123300A	2007-05-17
JP4387091B2	2009-12-16

Other References:

KOJI NISHI ET AL.: "Phosphorus Doping into 4H- SiC by Irradiation of Excimer Laser in Phosphoric Solution", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. 6, 20 June 2013 (2013-06-20), pages 06GF02 - 1-4, XP055244767
DAICHI MARUI ET AL.: "Aluminum Doping of 4H-SiC by Irradiation of Excimer Laser in Aluminum Chloride Solution", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, 21 May 2014 (2014-05-21), pages 06JF03 - 1-4, XP001590312

Attorney, Agent or Firm:

HOSAKA Nobuhisa (JP)
Hosaka Prolongation of life (JP)

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