Title:
LAYER STRUCTURE FOR MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD FOR STORING DATA IN MAGNETIC MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/014529
Kind Code:
A1
Abstract:
Provided are a layer structure for a magnetic memory element, the layer structure having improved controllability of a drive current required for domain wall displacement and that of domain wall displacement, and a magnetic memory element comprising the layer structure. A layer structure (9) of a magnetic memory element (10) comprises a plurality of first ferromagnetic layers (1) with a switchable spin state, and an interface layer (2) disposed between the plurality of first ferromagnetic layers (1) to constitute a domain wall. The interface layer (2) generates a ferromagnetic interaction (Aex) between the plurality of first ferromagnetic layers (1).
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Inventors:
ONO TERUO (JP)
Application Number:
PCT/JP2021/026111
Publication Date:
January 20, 2022
Filing Date:
July 12, 2021
Export Citation:
Assignee:
UNIV KYOTO (JP)
International Classes:
G11B5/39; G11C11/16; H01L21/8239; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| WO2019203132A1 | 2019-10-24 |
Foreign References:
| JP2002208681A | 2002-07-26 | |||
| JP2018026481A | 2018-02-15 | |||
| JP2019204948A | 2019-11-28 | |||
| JP2012212715A | 2012-11-01 |
Attorney, Agent or Firm:
SAEGUSA & PARTNERS (JP)
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