Title:
LDMOS DEVICE AND METHOD FOR PREPARATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/068647
Kind Code:
A1
Abstract:
The present invention relates to an LDMOS device and a method for preparation thereof; a barrier layer comprises an n-layer etch stop layer; an insulating layer is arranged between two adjacent etch stop layers; the materials of an interlayer dielectric layer and the insulating layer are both the same, oxide, and are different from the material of the etch stop layer, therefore when etching the oxide, can be stopped on each of the n layers of etch stop layers, forming n levels of field plate holes on the n layers of etch stop layers, respectively. The distance between the lower end of the first-level field plate hole adjacent to a gate structure and a drift region is the smallest, the distance between the n-th field plate hole adjacent to the drain region and the drift region is the largest, and thus the electric field distribution at the front and back ends of the drift region can be made more uniform, effectively improving the electric field distribution in the drift region such that the distributions of the front and rear electric fields of the drift region are uniform, resulting in a higher breakdown voltage.
Inventors:
JIN HUAJUN (CN)
SUN GUIPENG (CN)
SUN GUIPENG (CN)
Application Number:
PCT/CN2020/109700
Publication Date:
April 15, 2021
Filing Date:
August 18, 2020
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/336; H01L29/06
Foreign References:
| CN109390399A | 2019-02-26 | |||
| CN109244140A | 2019-01-18 | |||
| CN105826373A | 2016-08-03 | |||
| US20150137230A1 | 2015-05-21 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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