LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING

Title:

LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING

Document Type and Number:

WIPO Patent Application WO2006076207

Kind Code:

A3

Abstract:

Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Inventors:

DOAN TRUNG TRI
TRAN CHUONG ANH

Application Number:

PCT/US2006/000351

Publication Date:

November 02, 2006

Filing Date:

January 09, 2006

Export Citation:

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Assignee:

SEMILEDS CORP (US)
DOAN TRUNG TRI
TRAN CHUONG ANH

International Classes:

H01L21/00; H01L33/22; H01L33/00

Foreign References:

US20030178626A1	2003-09-25
US6410942B1	2002-06-25

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