Title:
LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2005/083806
Kind Code:
A1
Abstract:
On a first main surface of a substrate main part (10m) composed of a GaAs single crystal, a compound semiconductor layer (10k) for isolation composed of a III-V group compound semiconductor single crystal having a composition different from GaAs is epitaxially grown. On the compound semiconductor layer (10k), a sub-substrate part (10e) composed of a GaAs single crystal is epitaxially grown so as to make a substrate (10) for compound growth. On the first main surface of the sub-substrate part (10e), a main compound semiconductor layer (40) having a light emitting layer part (24) is epitaxially grown. Furthermore, the compound semiconductor layer (10k) is removed by chemical etching so as to isolate the sub-substrate part (10e) from the substrate (10) to have a remaining substrate part (1) on a second main surface of the main compound semiconductor layer (40). A part of the remaining substrate part (1) is notched to form a notched part (1j). Then, a bottom surface of the notched part (1j) is used as a light taking out surface or a reflecting surface for an emitting light flux from a light emitting layer part (24). Thus, a light emitting element wherein the GaAs substrate for growing light emitting layer part, which has been conventionally totally removed, can be effectively used as a functional element constituting element, and an efficiency of taking out the emitting light flux to the external can be improved.
Inventors:
YAMADA MASATO (JP)
TAKAHASHI MASANOBU (JP)
TAKAHASHI MASANOBU (JP)
Application Number:
PCT/JP2005/003133
Publication Date:
September 09, 2005
Filing Date:
February 25, 2005
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
YAMADA MASATO (JP)
TAKAHASHI MASANOBU (JP)
YAMADA MASATO (JP)
TAKAHASHI MASANOBU (JP)
International Classes:
H01L33/10; H01L33/30; H01L33/40; H01L33/62; H01S5/323; (IPC1-7): H01L33/00; H01S5/323
Foreign References:
| JPH0964484A | 1997-03-07 | |||
| JPH08335717A | 1996-12-17 | |||
| JPS6481277A | 1989-03-27 | |||
| JP2002305327A | 2002-10-18 | |||
| JP2005079326A | 2005-03-24 |
Attorney, Agent or Firm:
Sugawara, Masatsune (Sakae Yamakichi Bldg. 9-30, Sakae 2-chome,
Naka-ku, Nagoya-sh, Aichi 08, JP)
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