Title:
LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING SAME
Document Type and Number:
WIPO Patent Application WO/2007/026767
Kind Code:
A1
Abstract:
In an active layer (5), a delta layer (4) is buried in a single quantum well layer
of InGaN, and the quantum well layer is thereby separated into two quantum well
layers (3A, 3B). Band gap of the delta layer (4) is set wider than that of the quantum
well layers (3A, 3B) so that it has an effect on migration of carriers, but on contrary
to a barrier wall employed in a well-known multiple quantum well (MQW) structure,
its thickness is set at about 1 nm so that migration of electrons and holes are induced
substantially. Consequently, optical gain is enhanced and threshold current
is reduced while enhancing optical output.
Inventors:
PARK JONGWOON (JP)
KAWAKAMI YOICHI (JP)
KAWAKAMI YOICHI (JP)
Application Number:
PCT/JP2006/317114
Publication Date:
March 08, 2007
Filing Date:
August 30, 2006
Export Citation:
Assignee:
UNIV KYOTO (JP)
PARK JONGWOON (JP)
KAWAKAMI YOICHI (JP)
PARK JONGWOON (JP)
KAWAKAMI YOICHI (JP)
International Classes:
H01S5/343
Foreign References:
| JPH10261838A | 1998-09-29 | |||
| JP2005183964A | 2005-07-07 | |||
| JPS62144380A | 1987-06-27 | |||
| JPH09252163A | 1997-09-22 | |||
| JP2003234545A | 2003-08-22 |
Attorney, Agent or Firm:
KOTANI, Etsuji et al. (2-2 Nakanoshima 2-chome, Kita-k, Osaka-shi Osaka 05, JP)
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