Title:
LOW-TEMPERATURE SYNTHESIS OF SILICA
Document Type and Number:
WIPO Patent Application WO/2011/156484
Kind Code:
A3
Abstract:
An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.
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Inventors:
AIZENBERG JOANNA (US)
HATTON BENJAMIN (US)
HATTON BENJAMIN (US)
Application Number:
PCT/US2011/039625
Publication Date:
January 26, 2012
Filing Date:
June 08, 2011
Export Citation:
Assignee:
HARVARD COLLEGE (US)
AIZENBERG JOANNA (US)
HATTON BENJAMIN (US)
AIZENBERG JOANNA (US)
HATTON BENJAMIN (US)
International Classes:
C23C16/40; C23C16/455; C23C16/54
Foreign References:
| US20020018849A1 | 2002-02-14 | |||
| EP1925691A1 | 2008-05-28 | |||
| US20050172897A1 | 2005-08-11 | |||
| US20050233598A1 | 2005-10-20 |
Other References:
KAKOS J ET AL: "Ultrathin insulating silica layers prepared from adsorbed TEOS, H2O and NH3 as a catalyst", MICROELECTRONICS JOURNAL, MACKINTOSH PUBLICATIONS LTD. LUTON, GB, vol. 39, no. 12, 1 December 2008 (2008-12-01), pages 1626 - 1628, XP025678430, ISSN: 0026-2692, [retrieved on 20080318], DOI: 10.1016/J.MEJO.2008.02.008
FERGUSON J D ET AL: "ALD of SiO2 at room temperature using TEOS and H2O with NH3 as the catalyst", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 151, no. 8, 1 August 2004 (2004-08-01), pages G528 - G535, XP002394786, ISSN: 0013-4651, DOI: 10.1149/1.1768548
KLAUS J W ET AL: "Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions", SURFACE SCIENCE, NORTH-HOLLAND PUBLISHING CO, AMSTERDAM, NL, vol. 447, no. 1-3, 20 February 2000 (2000-02-20), pages 81 - 90, XP002252830, ISSN: 0039-6028, DOI: 10.1016/S0039-6028(99)01119-X
FERGUSON J D ET AL: "ALD of SiO2 at room temperature using TEOS and H2O with NH3 as the catalyst", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 151, no. 8, 1 August 2004 (2004-08-01), pages G528 - G535, XP002394786, ISSN: 0013-4651, DOI: 10.1149/1.1768548
KLAUS J W ET AL: "Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions", SURFACE SCIENCE, NORTH-HOLLAND PUBLISHING CO, AMSTERDAM, NL, vol. 447, no. 1-3, 20 February 2000 (2000-02-20), pages 81 - 90, XP002252830, ISSN: 0039-6028, DOI: 10.1016/S0039-6028(99)01119-X
Attorney, Agent or Firm:
SCOZZAFAVA, Mary, Rose et al. (399 Park AvenueNew York, NY, US)
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