METHOD FOR GROWING β-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE

Title:

METHOD FOR GROWING β-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE

Document Type and Number:

WIPO Patent Application WO/2015/046006

Kind Code:

A1

Abstract:

Provided are: a method for efficiently growing a high-quality, large diameter β-Ga2O3-based single crystal film; and a crystalline layered structure having a β-Ga2O3-based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using the HVPE method, and including a step for exposing a Ga2O3-based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a β-Ga2O3-based single crystal film (12) on the principal surface (11) of the Ga2O3-based substrate (10) at a growing temperature of 900°C or higher.

Inventors:

GOTO KEN (JP)
SASAKI KOHEI (JP)
KOUKITSU AKINORI (JP)
KUMAGAI YOSHINAO (JP)
MURAKAMI HISASHI (JP)

Application Number:

PCT/JP2014/074659

Publication Date:

April 02, 2015

Filing Date:

September 18, 2014

Export Citation:

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Assignee:

TAMURA SEISAKUSHO KK (JP)
UNIV TOKYO NAT UNIV CORP (JP)

International Classes:

C30B29/16; C23C16/40; C23C16/448; C30B25/14; H01L21/365

Domestic Patent References:

WO2013035845A1	2013-03-14
WO2013035842A1	2013-03-14

Foreign References:

JP2013056803A	2013-03-28
JP4565062B2	2010-10-20

Other References: