Title:
MAGNETIC MEMORY CELL READING DEVICE
Document Type and Number:
WIPO Patent Application WO/2006/062113
Kind Code:
A1
Abstract:
A magnetic memory device capable of reading information even at a lower power source voltage. The magnetic memory device comprises a plurality of memory cells (1) arrayed in a two-dimensional shape of (i+1) rows and (j+1) columns (i and j: integers of 1 or more). Each memory cell (1) includes a front-stage circuit (41) having two magnetic resistance effect manifesters (2a, 2b) individually arranged therein, for feeding electric currents (Ib1, Ib2) to sense the resistances of the magnetic resistance effect manifesters (2a, 2b), an X-direction address decoder circuit (32) for feeding electric currents (Iw1, Iw2) to the magnetic resistance effect manifesters (2a, 2b), and a current control circuit (a constant current circuit (25n)) for controlling the sum of the electric current (Ib1) and the electric current (Iw1) and the sum of the electric current (Iw2) and the electric current (Ib2) individually to constant values.
Inventors:
EZAKI JOICHIRO (JP)
KAKINUMA YUJI (JP)
KAKINUMA YUJI (JP)
Application Number:
PCT/JP2005/022425
Publication Date:
June 15, 2006
Filing Date:
December 07, 2005
Export Citation:
Assignee:
TDK CORP (JP)
EZAKI JOICHIRO (JP)
KAKINUMA YUJI (JP)
EZAKI JOICHIRO (JP)
KAKINUMA YUJI (JP)
International Classes:
G11C11/15
Foreign References:
| JPH01149291A | 1989-06-12 | |||
| JP2004280910A | 2004-10-07 | |||
| JPH0117778A |
Attorney, Agent or Firm:
Sakai, Shinji (Higashiterao Matsushiro-mach, Nagano-shi Nagano 25, JP)
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