MAGNETIC STORAGE DEVICE USING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

Title:

MAGNETIC STORAGE DEVICE USING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

Document Type and Number:

WIPO Patent Application WO/2003/079364

Kind Code:

A1

Abstract:

A magnetic storage device such that data is stored in a ferromagnetic tunnel junction element reliably with low power consumption. Data to be stored is written in a ferromagnetic tunnel element of a magnetic storage device by exerting a write magnetic force on the ferromagnetic tunnel element, and the stored data written in the ferromagnetic tunnel element is read by measuring the resistance of the ferromagnetic tunnel element. The magnitude of the write magnetic force is variable.

More Like This:

WO/2003/096354	SURFACE-SMOOTHING CONDUCTIVE LAYER FOR SEMICONDUCTOR DEVICES WITH MAGNETIC MATERIAL LAYERS
JPH08504533	[Title of the Invention] Utilization of a large fraction of a magnetoresistive memory structure
JP4334871	Non-volatile magnetic cache memory

Inventors:

MORIYAMA KATSUTOSHI (JP)
MORI HIRONOBU (JP)

Application Number:

PCT/JP2003/003195

Publication Date:

September 25, 2003

Filing Date:

March 17, 2003

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SONY CORP (JP)
MORIYAMA KATSUTOSHI (JP)
MORI HIRONOBU (JP)

International Classes:

G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): G11C11/15

Domestic Patent References:

WO2001024289A1

2001-04-05

Foreign References:

JP2003016778A	2003-01-17
JP2000208831A	2000-07-28

Other References: