MAGNETIC STORAGE ELEMENT, PRODUCTION METHOD AND DRIVING METHOD THEREFOR, AND MEMORY ARRAY

WIPO Patent Application WO/2002/058166

A1

A magnetic storage element comprising a magnetoresistance element, a conductor for generating a magnetic flux to change the resistance of the element, and at least one ferromagmetic element through which this magnetic flux passes, wherein the ferromagnetic element forms a magnetic gap, the magnetic flux passes the above element at this magnetic gap, and the following relations a) through c) are satisfied: a) M1 $m(F) 2Lg, b) at least one of Lw/Ly $m(F) 5 and Ly/Lt $m(G) 5, and c) Ly $m(F) 1.0 $g(m)m; where, M1 is the length of the element measured in a direction parallel to the magnetic gap, Lg magnetic gap length, Lt ferromagnetic element thickness, Lw the length of the ferromagnetic element in the elongation direction of the conductor, Ly distance over which the magnetic flux passes in the ferromagnetic element. Another element useful for implementing a higher capacity similarly to the above element is provided.

MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SATOMI MITSUO (JP)
SUGITA YASUNARI (JP)

PCT/JP2002/000327

July 25, 2002

January 18, 2002

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MATSUSHITA ELECTRIC IND CO LTD (JP)
MATSUKAWA NOZOMU (JP)
HIRAMOTO MASAYOSHI (JP)
ODAGAWA AKIHIRO (JP)
SATOMI MITSUO (JP)
SUGITA YASUNARI (JP)

G11C11/15; G11C11/16; H01F10/32; H01L21/8246; H01L27/22; H01L29/66; (IPC1-7): H01L43/08; H01L27/105; G11C11/14; G11C11/15

EP0776011A2	1997-05-28
JP2000090658A	2000-03-31
JP2000156531A	2000-06-06
US5902690A	1999-05-11
US5894447A	1999-04-13
JP2000195250A	2000-07-14
JP2002110938A	2002-04-12

IKEUCHI SATO & PARTNER PATENT ATTORNEYS (OAP TOWER 8-30, Tenmabashi 1-chom, Kita-ku Osaka-shi Osaka, JP)

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