Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MRAM
Document Type and Number:
WIPO Patent Application WO/2008/072421
Kind Code:
A1
Abstract:
A magnetoresistance effect element comprising magnetization free layer (1)
and fixed magnetization layer (3) connected via nonmagnetic layer (2) to the
magnetization free layer (1). The magnetization free layer (1) includes magnetization
reversal region (13), first fixed magnetization region (11) and second fixed
magnetization region (12). The magnetization reversal region (13) with reversible
magnetization overlaps the fixed magnetization layer (3). The first fixed
magnetization region (11) with first fixed magnetization is connected to one
end (13a) of the magnetization reversal region (13). The second fixed magnetization
region (12) with second fixed magnetization is connected to the other end (13b)
of the magnetization reversal region (13). The first fixed magnetization region
(11) and the magnetization reversal region (13) form one three-way junction,
while the second fixed magnetization region (12) and the magnetization reversal
region (13) form another three-way junction.
Inventors:
FUKAMI SHUNSUKE (JP)
Application Number:
PCT/JP2007/070571
Publication Date:
June 19, 2008
Filing Date:
October 22, 2007
Export Citation:
Assignee:
NEC CORP (JP)
FUKAMI SHUNSUKE (JP)
FUKAMI SHUNSUKE (JP)
International Classes:
H01L43/08; G11C11/15; H01L21/8246; H01L27/105; H01L29/82
Domestic Patent References:
| WO2006090656A1 | 2006-08-31 |
Foreign References:
| JP2002056665A | 2002-02-22 | |||
| JP2005191032A | 2005-07-14 | |||
| JP2005150303A | 2005-06-09 |
Attorney, Agent or Firm:
KUDOH, Minoru (24-10 Minamiooi 6-chom, Shinagawa-ku Tokyo, JP)
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