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Title:
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT TYPE MAGNETIC HEAD
Document Type and Number:
WIPO Patent Application WO/2002/039511
Kind Code:
A1
Abstract:
A CPP structure of a GMR element, which has a laminate structure unite (10) by a spin valve structure formed by laminating a free layer (1) having its magnetization rotated in response to an external magnetic field, a fixed layer (3), antiferromagnetic layer (4) for fixing the magnetization of this fixed layer (3), and a non-magnetic layer (2) interposed between the free layer (1) and the fixed layer (3), which sets the supply direction of a sense current to the laminated direction, that is a direction crossing or orthogonally crossing the plane direction of the laminate structure unit (10), and which sections at least one of the free layer (1) and the fixed layer (3) by a thin film layer up to 1.9 nm thick to form a multi-layer shape formed with a plurality of different-phase interfaces, whereby scattering of spin dependency of a conductive electron is enhanced to improve sensitivity.

Inventors:
HOSOMI MASANORI (JP)
MAKINO EIJI (JP)
Application Number:
PCT/JP2001/009733
Publication Date:
May 16, 2002
Filing Date:
November 07, 2001
Export Citation:
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Assignee:
SONY CORP (JP)
HOSOMI MASANORI (JP)
MAKINO EIJI (JP)
International Classes:
G01R33/09; G11B5/39; H01F10/26; H01F10/32; H01L43/08; (IPC1-7): H01L43/08; G11B5/39; G01R33/09; H01F10/32
Foreign References:
US5668688A1997-09-16
JP2000228004A2000-08-15
JPH07221363A1995-08-18
JPH11163436A1999-06-18
JP2000252548A2000-09-14
Attorney, Agent or Firm:
Matsukuma, Hidemori (8-1 Nishishinjuku 1-chome Shinjuku-ku, Tokyo, JP)
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