MAGNETORESISTIVE DEVICE, METHOD FOR MANUFACTURING MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

WIPO Patent Application WO/2006/006630

A1

A method for manufacturing a magnetoresistive device comprises a step for forming an antiferromagnetic layer on the upper surface of a substrate, a step for forming a first fixed ferromagnetic layer on the antiferromagnetic layer on the upper surface of the substrate, a step for exposing the first fixed ferromagnetic layer to a gas containing oxygen atoms at a pressure of not less than 5 × 10^-7 Pa and not more than 1 × 10^-4 Pa, a step for forming a second fixed ferromagnetic layer on the first fixed ferromagnetic layer, a step for forming a tunnel barrier layer on the second fixed ferromagnetic layer, and a step for forming a free ferromagnetic layer on the tunnel barrier layer. In this connection, an oxygen gas having a pressure (partial pressure) of not less than 5 × 10^-7 Pa and not more than 1 × 10^-4 Pa exemplifies the gas containing oxygen atoms. In this method for manufacturing a magnetoresistive device, the second fixed ferromagnetic layer is so formed as to have a thickness of more than 0 and not more than 1 nm.

WO/2022/142128	MANUFACTURING METHOD FOR SEMICONDUCTOR APPARATUS
JP2003317201	SEMICONDUCTOR INTEGRATED CIRCUIT
WO/1995/010123	MAGNETO-RESISTANCE DEVICE, AND MAGNETIC HEAD EMPLOYING SUCH A DEVICE

HONJO HIROAKI (JP)
FUKUMOTO YOSHIYUKI (JP)

PCT/JP2005/012955

January 19, 2006

July 13, 2005

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NEC CORP (JP)
HONJO HIROAKI (JP)
FUKUMOTO YOSHIYUKI (JP)

H01L43/08; G01R33/09; G11C11/15; H01F10/32; H01L21/8246; H01L27/105; H01L43/12

JP2004119903A	2004-04-15
JP2002124718A	2002-04-26
JP2003086866A	2003-03-20
JP2002204002A	2002-07-19

Kudoh, Minoru (24-10 Minamiooi 6-chom, Shinagawa-ku Tokyo 13, JP)

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