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Title:
MAGNETORESISTIVE-ELEMENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/072139
Kind Code:
A1
Abstract:
This invention provides a method for manufacturing a magnetoresistive element that has a higher MR ratio than existing magnetoresistive elements. A magnetoresistive-element manufacturing method in one embodiment of this invention has the following steps: a step (S93) in which a tunnel barrier layer is formed on top of a substrate that has a free layer or a reference layer formed on the surface thereof; a step (S94) in which, after the step in which the tunnel barrier layer is formed, the substrate is cooled; and a step (S95) in which, after the step in which the substrate is cooled, either a free layer or a reference layer, namely whichever was not formed on the substrate, is formed on top of the tunnel barrier layer.

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Inventors:
SEINO TAKUYA (JP)
OTANI YUICHI (JP)
NISHIMURA KAZUMASA (JP)
Application Number:
PCT/JP2014/005681
Publication Date:
May 21, 2015
Filing Date:
November 12, 2014
Export Citation:
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Assignee:
CANON ANELVA CORP (JP)
International Classes:
H01L43/12; C23C14/58; H01L21/02; H01L21/3065; H01L21/677; H01L21/683
Domestic Patent References:
WO2011081203A12011-07-07
Foreign References:
JP2011054238A2011-03-17
JP2005203702A2005-07-28
JP2009081315A2009-04-16
JP2006286669A2006-10-19
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)
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