MAGNETRON SPUTTERING DEVICE MAKING MAGNETIC FLUX ARRANGEMENT (BALANCED TYPE/UNBALANCED TYPE) SWITCHABLE AND FILM FORMING METHOD FOR INORGANIC THIN FILM MATERIAL USING THIS DEVICE, AND DUAL-TYPE MAGNETRON SPUTTERING DEVICE AND FILM FORMING METHOD FOR INORGANIC THIN FILM MATERIAL MAKING POSSIBLE LOW-TEMPERATURE FILM FORMING B

WIPO Patent Application WO/2006/006637

A1

An object exhibiting ferromagnetism at room temperature is detachably installed in the vicinity of the material target holding surface of a sputtering cathode having a balanced type magnetic flux arrangement to make a magnetic flux magnetic field arrangement at a magnetron cathode simply switchable to a balanced type or a balanced type. In addition, two magnetrons are provided so that an angle formed by the extension lines of their respective material holding surfaces is set to 160-20&ring , preferably 160-70&ring , and an active region is concentrated on a substrate to enable low-temperature, high-speed film forming. Further, a magnetron designed for an unbalanced type magnetic flux magnetic field is selected, and at least two mixed rare gases are used, thereby enabling lower-temperature, higher-speed film forming.

KAMEI MASAYUKI (JP)
ISHIGAKI TAKAMASA (JP)

PCT/JP2005/012968

January 19, 2006

July 07, 2005

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NAT INST FOR MATERIALS SCIENCE (JP)
KAMEI MASAYUKI (JP)
ISHIGAKI TAKAMASA (JP)

B01J37/02; C23C14/35; C23C14/08

JPH09118980A	1997-05-06
JP2002105623A	2002-04-10
JP2003013220A	2003-01-15
JPH11195333A	1999-07-21
JP2001149790A	2001-06-05
JP2003301268A	2003-10-24
JP2000273619A	2000-10-03
JPH03111561A	1991-05-13

Moritake, Yoshiaki (Kita-yaesu Bldg. 3rd Floor 2-11, Nihonbashi 3-chom, Chuo-ku Tokyo 27, JP)

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