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Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/170730
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a manufacturing method for a semiconductor structure and the semiconductor structure. The manufacturing method comprises: providing a substrate, forming on the substrate bit lines extending in a first direction and grooves arranged between the adjacent bit lines; forming dielectric layers filling the grooves and contact layers, the dielectric layers and the contact layers being provided at an interval in the first direction, the dielectric layers and the contact layers being in contact with the substrate, and the contact layers being provided therein with first gaps; removing parts of the contact layers to expose the first gaps; forming filling layers filling the first gaps; and re-etching the contact layers and the filling layers.

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Inventors:
LU JINGWEN (CN)
HUNG HAI-HAN (CN)
Application Number:
PCT/CN2021/105313
Publication Date:
August 18, 2022
Filing Date:
July 08, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242
Foreign References:
CN110957209A2020-04-03
CN112242346A2021-01-19
CN112992792A2021-06-18
CN110364529A2019-10-22
CN107492550A2017-12-19
US20040033659A12004-02-19
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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