Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/045268
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors. Provided are a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method for a semiconductor structure comprises: providing a substrate, and forming a stacking structure on the substrate; forming a hard mask layer on the stacking structure, wherein the hard mask layer comprises a first etching window, and the first etching window exposes part of the top face of the stacking structure; forming a photoresist layer, wherein the photoresist layer covers the first etching window; and trimming the photoresist layer multiple times, and after each instance of trimming of the photoresist layer, etching the stacking structure according to the trimmed photoresist layer, and forming, in the stacking structure, multiple steps in a direction away from the substrate.
Inventors:
GUO SHUAI (CN)
Application Number:
PCT/CN2022/124157
Publication Date:
March 07, 2024
Filing Date:
October 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768
Foreign References:
| CN106206447A | 2016-12-07 | |||
| CN113540040A | 2021-10-22 | |||
| CN102583225A | 2012-07-18 | |||
| CN110783341A | 2020-02-11 | |||
| US20140057429A1 | 2014-02-27 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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