Title:
MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/014248
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a mask blank which makes it possible to accurately manufacture a transfer mask having an auxiliary pattern with a microscopic dimension of about 20 nm. This mask blank (10) comprises a structure in which a pattern-forming thin film (2), a first hard mask film (3), and a second hard mask film (4) are layered in this order on the main surface of a substrate (1), the mask blank being characterized in that: the pattern-forming thin film contains a transition metal; the first hard mask film contains oxygen and at least one element selected from silicon and tantalum; the second hard mask film contains a transition metal; the transition metal content in the second hard mask film is less than the transition metal content in the pattern-forming thin film; a region above the main surface where the first hard mask film is formed is smaller than a region where the pattern-forming thin film is formed; and at least a portion of the second hard mask film is in contact with at least a portion of the pattern-forming thin film.
Inventors:
SHISHIDO HIROAKI (JP)
NOZAWA OSAMU (JP)
NOZAWA OSAMU (JP)
Application Number:
PCT/JP2021/023031
Publication Date:
January 20, 2022
Filing Date:
June 17, 2021
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/32; C23C14/06; G03F1/54; G03F1/80
Foreign References:
| JP2018151453A | 2018-09-27 | |||
| JP2018151451A | 2018-09-27 | |||
| JP2009069677A | 2009-04-02 | |||
| JP2006303500A | 2006-11-02 | |||
| JP2019503082A | 2019-01-31 |
Attorney, Agent or Firm:
NAGATA, Yutaka et al. (JP)
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