MASK BLANK, PHASE SHIFT MASK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2018/056033

A1

Provided is a mask blank for a phase shift mask that transmits ArF excimer laser light at a transmittance of 10% or greater, has a high correction rate ratio for translucent substrates when EB defect correction is performed, and for which black defect correction can be performed with high precision. The mask blank is such that: a phase shift film on a translucent substrate has a function for transmitting ArF excimer laser light at a transmittance of 10% or greater and producing a phase shift of 150 - 200 degrees, and includes a structure wherein six or more layers in the order of a low transmission layer and a high transmission layer are laminated alternatingly from the translucent substrate side; the low transmission layer is formed from a material that includes silicon and nitrogen, with the nitrogen content being 50 at.% or greater, and the high transmission layer is formed from a material that includes silicon and oxygen, with the oxygen content being 50 at.% or greater or a material that includes silicon, nitrogen, and oxygen, with the nitrogen content being 10 at.% or greater and the oxygen content being 30 at.% or greater; and the thickness of the low transmission layer is greater than the thickness of the high transmission layer, and the thickness of the high transmission layer is 4 nm or less.

HORIGOME YASUTAKA (JP)
TANIGUCHI KAZUTAKE (JP)
SHISHIDO HIROAKI (JP)

PCT/JP2017/031748

March 29, 2018

September 04, 2017

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HOYA CORP (JP)

G03F1/32; H01L21/3065

JP2016018192A	2016-02-01
JP2016035559A	2016-03-17
JP2016020949A	2016-02-04
JP2002535702A	2002-10-22
JP2012528353A	2012-11-12
JP2004062135A	2004-02-26

NAGATA, Yutaka et al. (JP)

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