MASK BLANK, PHASE-SHIFT MASK, METHOD OF MANUFACTURING PHASE-SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2022/004350

A1

Provided is a mask blank that enables, without complicating the mask-manufacturing process, creation of patterns of differing transmittance with desired accuracy, and achievement of a desired phase-shift function in each pattern.　This mask blank is characterized in that: a transmittance-adjusting film is provided atop a phase-shift film; the phase-shift film produces, in exposure light from an ArF excimer laser transmitting through the phase-shift film, a phase difference of 150-210 degrees from the exposure light having passed through air for a distance equivalent to the thickness of the phase shift film; and the relationships of the following formulas (1) and (2) are satisfied where the refractive index at the wavelength of the exposure light through the transmittance-adjusting film is nU, the extinction coefficient at the wavelength of the exposure light is kU, and the thickness is dU[nm]. Formula (1) dU ≤ −17.63 × nU 3 + 142.0 × nU 2 −364.9 × nU + 315.8 Formula (2) dU ≥ −2.805 × kU 3 + 19.48 × kU 2 −43.58 × kU + 38.11

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NOZAWA OSAMU (JP)
AKIYAMA KEISHI (JP)

PCT/JP2021/022631

January 06, 2022

June 15, 2021

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HOYA CORP (JP)

G03F1/32

JP2020042208A	2020-03-19
JP2019207359A	2019-12-05
JP2018109780A	2018-07-12
JP2006215297A	2006-08-17
JP2008310091A	2008-12-25

NAGATA, Yutaka et al. (JP)

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