Title:
MASK PATTERN CORRECTION METHOD AND APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/252387
Kind Code:
A1
Abstract:
The present invention provides a mask pattern correction method and apparatus, and a semiconductor device manufacturing method. The mask pattern correction method comprises: obtaining an initial pattern of a mask, the initial pattern comprising a scribe line region and a plurality of spaced chip regions, the scribe line region being located between two adjacent chip regions, each chip region comprising a chip sub-region and a first sub-TEG region, the scribe line region comprising a scribe line sub-region and a second sub-TEG region, the first sub-TEG regions being adjacent to the second sub-TEG region, and the first sub-TEG regions and the second sub-TEG region constituting a TEG region; and performing optical proximity correction (OPC) on regions of the initial pattern other than the TEG region to obtain a final pattern. The method ensures that the final pattern obtained after OPC does not produce slits, avoids the problem in the prior art of slits on the mask after OPC, and ensures that the effect of the formed final pattern is good.
Inventors:
LI SHUPING (CN)
Application Number:
PCT/CN2021/110608
Publication Date:
December 08, 2022
Filing Date:
August 04, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/522; H01L23/482; H01L23/528
Foreign References:
| CN101060110A | 2007-10-24 | |||
| CN1383188A | 2002-12-04 | |||
| US20050139826A1 | 2005-06-30 | |||
| US6136478A | 2000-10-24 | |||
| US20100167190A1 | 2010-07-01 |
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (CN)
Download PDF: