Title:
MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2008/035620
Kind Code:
A1
Abstract:
Disclosed are: a material for use in the formation of a protective film which is intended to be laminated on a photoresist film, which can prevent the contamination of an exposure device with an out gas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which hardly causes the mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for use in the formation of a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
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Inventors:
TAKAYAMA TOSHIKAZU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
Application Number:
PCT/JP2007/067887
Publication Date:
March 27, 2008
Filing Date:
September 13, 2007
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
TAKAYAMA TOSHIKAZU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
TAKAYAMA TOSHIKAZU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
International Classes:
G03F7/11; G03F7/38; H01L21/027
Foreign References:
JPH0695397A | 1994-04-08 | |||
JPS62160446A | 1987-07-16 |
Attorney, Agent or Firm:
SHOBAYASHI, Masayuki (25-8 Higashi-ikebukuro 1-chome, Toshima-k, Tokyo 13, JP)
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