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Title:
MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2008/035620
Kind Code:
A1
Abstract:
Disclosed are: a material for use in the formation of a protective film which is intended to be laminated on a photoresist film, which can prevent the contamination of an exposure device with an out gas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which hardly causes the mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for use in the formation of a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Inventors:
TAKAYAMA TOSHIKAZU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
Application Number:
PCT/JP2007/067887
Publication Date:
March 27, 2008
Filing Date:
September 13, 2007
Export Citation:
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Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
TAKAYAMA TOSHIKAZU (JP)
ISHIDUKA KEITA (JP)
HADA HIDEO (JP)
YOKOI SHIGERU (JP)
International Classes:
G03F7/11; G03F7/38; H01L21/027
Foreign References:
JPH0695397A1994-04-08
JPS62160446A1987-07-16
Attorney, Agent or Firm:
SHOBAYASHI, Masayuki (25-8 Higashi-ikebukuro 1-chome, Toshima-k, Tokyo 13, JP)
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