Title:
MEASUREMENT PATTERN AND PREPARATION METHOD THEREFOR, AND MEASUREMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2024/000635
Kind Code:
A1
Abstract:
A semiconductor measurement accuracy monitoring method and apparatus, and a device and a medium. A measurement pattern comprises a target layer, and a first measurement mark pattern (11), a second measurement mark pattern (21), a plurality of first auxiliary mark patterns (12) and a plurality of second auxiliary mark patterns (21), which are located in different regions on the target layer, wherein the first measurement mark pattern (11) comprises a plurality of first mark units (111), which are distributed in an array, and the first mark units (111) have a first preset parameter, which comprises a first preset etch offset; and the second measurement mark pattern (21) comprises a plurality of second mark units (211), which are distributed in an array, and the second mark units (211) have a second preset parameter, which comprises a second preset etch offset. The semiconductor measurement accuracy monitoring apparatus can quickly and accurately measure an etch offset, due to a single etching process, of a semiconductor structure, which is acquired after execution of the etching process multiple times.
Inventors:
QIU SHAOWEN (CN)
Application Number:
PCT/CN2022/104882
Publication Date:
January 04, 2024
Filing Date:
July 11, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G03F7/20
Foreign References:
| CN104216234A | 2014-12-17 | |||
| CN112015061A | 2020-12-01 | |||
| CN111766764A | 2020-10-13 | |||
| CN108089412A | 2018-05-29 | |||
| CN114578662A | 2022-06-03 | |||
| US20080032208A1 | 2008-02-07 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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