Title:
MEMORY DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/120911
Kind Code:
A1
Abstract:
Disclosed are a memory device and an electronic apparatus. The memory device at least comprises a substrate, a first nanowire, a second nanowire, a third nanowire and a fourth nanowire, wherein a first gate electrode of a first transistor and a second gate electrode of a second transistor are respectively arranged around the first nanowire; a third gate electrode of a third transistor and a fourth gate electrode of a fourth transistor are respectively arranged around the second nanowire; a fifth gate electrode of a fifth transistor is arranged around the third nanowire; and a sixth gate electrode of a sixth transistor is arranged around the fourth nanowire. A first drain electrode of the first transistor and a second source electrode of the second transistor are connected to a first storage node; a third drain electrode of the third transistor and a fourth source electrode of the fourth transistor are connected to a second storage node; the first gate electrode of the first transistor and the second gate electrode of the second transistor are connected to the second storage node; and the third gate electrode of the third transistor and the fourth gate electrode of the fourth transistor are connected to the first storage node.
Inventors:
KONG FANSHENG (CN)
ZHOU HUA (CN)
ZHOU HUA (CN)
Application Number:
PCT/CN2020/136889
Publication Date:
June 16, 2022
Filing Date:
December 16, 2020
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H01L27/11
Foreign References:
| CN110634870A | 2019-12-31 | |||
| CN106158867A | 2016-11-23 | |||
| US20180122793A1 | 2018-05-03 | |||
| CN104241521A | 2014-12-24 | |||
| US20180374857A1 | 2018-12-27 |
Attorney, Agent or Firm:
P. C. & ASSOCIATES (CN)
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