Title:
MEMORY DEVICE AND METHOD FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/237403
Kind Code:
A1
Abstract:
Memory device includes a bottom-select-gate (BSG) structure. Cut slits are formed vertically through the BSG structure, on a substrate. A cell-layers structure is formed on the BSG structure. Gate-line slits are formed vertically through the cell-layers structure and the BSG structure, into the substrate and arranged along a first lateral direction to distinguish finger regions. The gate-line slits include a first gate-line slit between first and second finger regions, the first gate-line slit including gate-line sub-slits. The cut slits include a first cut-slit, formed in the second finger region and connecting to a gate-line sub-slit to define a BSG in a first portion of the second finger region. The BSG in the first portion of the second finger region is electrically connected to cell strings in the first finger region through an inter portion between the one gate-line sub-slit and an adjacent gate-line sub-slit.
Inventors:
SUN ZHONGWANG (CN)
ZHANG ZHONG (CN)
LIU LEI (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
ZHANG ZHONG (CN)
LIU LEI (CN)
ZHOU WENXI (CN)
XIA ZHILIANG (CN)
Application Number:
PCT/CN2020/092081
Publication Date:
December 02, 2021
Filing Date:
May 25, 2020
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157; H01L27/11582
Foreign References:
| CN109690776A | 2019-04-26 | |||
| CN110914990A | 2020-03-24 | |||
| US10269820B1 | 2019-04-23 | |||
| CN111108600A | 2020-05-05 | |||
| US20100320528A1 | 2010-12-23 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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