Title:
MEMORY DEVICE AND SEMICONDUCTOR APPARATUS HAVING SAID MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/136464
Kind Code:
A1
Abstract:
Provided is a novel memory device. The present invention comprises a transistor and a capacitive device, wherein the transistor includes: a first oxide semiconductor; a first conductor and a second conductor provided on the upper surface of the first oxide semiconductor; a second oxide semiconductor formed on the first oxide semiconductor and provided between the first conductor and the second conductor; a first insulator provided in contact with the second oxide semiconductor; and a third conductor provided in contact with the first insulator. The capacitive device includes a second conductor, a second insulator on the second conductor, and a fourth conductor on the second insulator, and the first oxide semiconductor includes a groove portion deeper than the thicknesses of the first conductor and the second conductor.
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Inventors:
YAMAZAKI SHUNPEI (JP)
KATO KIYOSHI (JP)
ONUKI TATSUYA (JP)
KATO KIYOSHI (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2019/059811
Publication Date:
July 02, 2020
Filing Date:
November 15, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L27/088; H01L27/108; H01L29/786
Domestic Patent References:
| WO2017158465A1 | 2017-09-21 | |||
| WO2018167601A1 | 2018-09-20 | |||
| WO2018178793A1 | 2018-10-04 |
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