Title:
MEMORY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/279547
Kind Code:
A1
Abstract:
Provided are a memory (20) and a manufacturing method therefor. The manufacturing method comprises: step S301: providing a substrate (200), wherein the substrate (200) comprises a first N-type active area (202) and a first P-type active area (205); step S302: forming an epitaxial layer (206) that covers the first P-type active area (205), wherein the epitaxial layer (206) exposes the first N-type active area (202); step S303: forming a first gate dielectric layer (203) that covers the first N-type active area (202), and simultaneously forming a second gate dielectric layer (207) that covers the epitaxial layer (206), wherein the thickness of the first gate dielectric layer (203) is basically the same as the thickness of the second gate dielectric layer (207); and step S304: forming a first gate electrode (204) that covers the first gate dielectric layer (203), so as to form a first NMOS device (21), and forming a second gate electrode (208) that covers the second gate dielectric layer (207), so as to form a first PMOS device (22).
Inventors:
YANG MENGMENG (CN)
LI XIAOJIE (CN)
WANG XIAOLING (CN)
LI XIAOJIE (CN)
WANG XIAOLING (CN)
Application Number:
PCT/CN2021/121056
Publication Date:
January 12, 2023
Filing Date:
September 27, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8238; H01L27/092
Foreign References:
| CN101958322A | 2011-01-26 | |||
| US20070287244A1 | 2007-12-13 | |||
| CN102790052A | 2012-11-21 | |||
| US20110012207A1 | 2011-01-20 | |||
| CN1830092A | 2006-09-06 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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