Title:
MEMORY AND STORAGE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/060371
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a memory and a storage system. The memory comprises: a substrate; a control circuit layer located in the substrate, wherein the control circuit layer comprises part of a control circuit of the memory; and at least two storage structure layers, which are successively stacked on the control circuit layer in a first direction, the first direction being perpendicular to a surface of the substrate. The storage structure layers are connected to the control circuit layer. Each storage structure layer comprises storage units arranged in an array. Each storage unit comprises a storage structure and at least two series-connected selection transistors connected to the storage structure, wherein the at least two series-connected selection transistors are stacked in the first direction; a channel structure of each selection transistor comprises at least one nanosheet; and the at least two series-connected selection transistors share one gate structure.
Inventors:
TANG YANZHE (CN)
Application Number:
PCT/CN2022/130658
Publication Date:
March 28, 2024
Filing Date:
November 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01B12/00
Foreign References:
| CN109841630A | 2019-06-04 | |||
| US20130207067A1 | 2013-08-15 | |||
| US20210159231A1 | 2021-05-27 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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