Title:
MEMORY AND STORAGE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/060370
Kind Code:
A1
Abstract:
The embodiments of the present disclosure disclose a memory and a storage system. The memory comprises: a substrate; a control circuit layer located in the substrate, wherein the control circuit layer comprises at least part of a control circuit of the memory; and at least two storage structure layers, wherein the at least two storage structure layers are successively stacked on the control circuit layer, and the storage structure layer is electrically connected to the control circuit layer.
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Inventors:
TANG YANZHE (CN)
Application Number:
PCT/CN2022/130651
Publication Date:
March 28, 2024
Filing Date:
November 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L25/065
Foreign References:
| CN110291641A | 2019-09-27 | |||
| CN109755251A | 2019-05-14 | |||
| CN114121968A | 2022-03-01 | |||
| CN112740403A | 2021-04-30 | |||
| US20010022369A1 | 2001-09-20 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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