MEMS DEVICE PRODUCTION METHOD, MEMS DEVICE, AND SHUTTER DEVICE USING SAME

Title:

MEMS DEVICE PRODUCTION METHOD, MEMS DEVICE, AND SHUTTER DEVICE USING SAME

Document Type and Number:

WIPO Patent Application WO/2019/187844

Kind Code:

A1

Abstract:

This production method at least comprises: a heat treatment step for heating an SOI substrate 200 having a first silicon layer 210 at a first temperature at which the diffusive flow rate of interstitial silicon atoms in a silicon single crystal is greater than the diffusive flow rate of interstitial oxygen atoms; and a processing step for obtaining a displacement enlarging mechanism 10 by processing the SOI substrate 200 after the heat treatment step.

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Inventors:

MATSUOKA GEN (JP)
KIUCHI MARIO (JP)

Application Number:

PCT/JP2019/006735

Publication Date:

October 03, 2019

Filing Date:

February 22, 2019

Export Citation:

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Assignee:

SUMITOMO PRECISION PROD CO (JP)

International Classes:

B81C1/00; B81B3/00; G02B26/02

Domestic Patent References:

WO2005117122A1

2005-12-08

Foreign References:

JP2018025804A	2018-02-15
JP2005515633A	2005-05-26
JP2017529683A	2017-10-05
JPH0964319A	1997-03-07
JP5776232B2	2015-09-09
JP5555269B2	2014-07-23
JP2008016534A	2008-01-24
JP4147578B2	2008-09-10

Attorney, Agent or Firm:

MAEDA & PARTNERS (JP)

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