METAL OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY

WIPO Patent Application WO/2019/223076

A1

Disclosed in the present invention is a manufacturing method for a metal oxide thin film transistor. The manufacturing method comprises the following steps: forming a light shielding layer, a metal oxide semiconductor layer, a gate, and a first photoresist pattern layer stacked on a substrate; forming a second photoresist layer on the metal oxide semiconductor layer and the first photoresist pattern layer; ashing the second photoresist layer and the first photoresist pattern layer, and stripping off the ashed second photoresist layer and first photoresist pattern layer; forming a first insulating layer on the metal oxide semiconductor layer and the gate; and forming, on the first insulating layer, a source and a drain passing through the first insulating layer to separately contact the metal oxide semiconductor layer. According to the present invention, by depositing a second photoresist layer on a first photoresist pattern layer cured after semiconductorization processing, the second photoresist layer and the first photoresist pattern layer form a leveling photoresist layer, and can be easily stripped off after being ashed.

LIN QINZUN (CN)
HUANG GUIHUA (CN)

PCT/CN2018/095086

November 28, 2019

July 10, 2018

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SHENZHEN CHINA STAR OPTOELECT (CN)

H01L21/027

CN107689345A	2018-02-13
CN104538348A	2015-04-22
US20050142680A1	2005-06-30
CN102254861A	2011-11-23

MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)

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