Title:
METAL OXIDE, AND TRANSISTOR HAVING METAL OXIDE
Document Type and Number:
WIPO Patent Application WO/2020/170068
Kind Code:
A1
Abstract:
Provided is a novel metal oxide. The metal oxide has a first region and a second region, and has a third region between the first region and the second region. An interface of the first region is covered by the third region. The crystallinity of the third region is lower than the crystallinity of the first region, and the crystallinity of the second region is lower than the crystallinity of the third region. In addition, the size of the first region as measured from an observation image using a transmission type electron microscope is 1-3 nm.
Inventors:
YAMAZAKI SHUNPEI (JP)
NAKAYAMA TOMONORI (JP)
TAKAHASHI MASAHIRO (JP)
NAKAYAMA TOMONORI (JP)
TAKAHASHI MASAHIRO (JP)
Application Number:
PCT/IB2020/051041
Publication Date:
August 27, 2020
Filing Date:
February 11, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
C23C14/08; H01L21/336; H01L21/363; H01L21/8242; H01L27/108; H01L27/1156; H01L27/32; H01L29/786; H01L29/788; H01L29/792; H01L51/50
Foreign References:
| JP2011100997A | 2011-05-19 | |||
| JP2006165529A | 2006-06-22 |
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