Title:
STORAGE DEVICE HAVING ERROR DETECTING FUNCTION, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/170069
Kind Code:
A1
Abstract:
Provided is a storage device having an error detecting function and capable of storing a large amount of data per unit area. A drive circuit for the storage device is configured with transistors formed on a semiconductor substrate, and memory cells for the storage device are configured with thin-film transistors. A plurality of layers in which memory cells are configured with thin-film transistors may be stacked over the semiconductor substrate, making it possible to increase the amount of data that can be stored per unit area. Also, a part of a peripheral circuit included in the storage device can be configured with thin-film transistors. Thus, an error detecting circuit is configured with thin-film transistors and layered over the semiconductor substrate.
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Inventors:
KUNITAKE HITOSHI (JP)
ONUKI TATSUYA (JP)
ATSUMI TOMOAKI (JP)
KATO KIYOSHI (JP)
ONUKI TATSUYA (JP)
ATSUMI TOMOAKI (JP)
KATO KIYOSHI (JP)
Application Number:
PCT/IB2020/051043
Publication Date:
August 27, 2020
Filing Date:
February 11, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L29/786
Foreign References:
| JP2016224932A | 2016-12-28 | |||
| US20130044538A1 | 2013-02-21 | |||
| JP2016164780A | 2016-09-08 | |||
| US20170148514A1 | 2017-05-25 |
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