METHOD AND APPARATUS FOR ETCH ENDPOINT DETECTION

Title:

METHOD AND APPARATUS FOR ETCH ENDPOINT DETECTION

Document Type and Number:

WIPO Patent Application WO2005045890

Kind Code:

A3

Abstract:

Broadly speaking, an invention is provided for monitoring a plasma optical emission. More specifically, the present invention provides a method for monitoring the plasma optical emission through a variable aperture to detect an endpoint of a plasma etching process without interferences that could lead to false endpoint calls. The method includes collecting optical emission data from a plasma through an aperture defined by moveable members. The moveable members are capable of varying a configuration of the aperture. The method also includes holding the moveable members at a particular time to cause the aperture to maintain a fixed configuration. The method further includes detecting a specific perturbation in the plasma optical emission while holding the moveable members.

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Inventors:

MCMILLIN BRIAN K (US)
DASSAPA FRANCOIS CHANDRASEKAR (US)

Application Number:

PCT/US2004/034840

Publication Date:

November 24, 2005

Filing Date:

October 20, 2004

Export Citation:

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Assignee:

LAM RES CORP (US)
MCMILLIN BRIAN K (US)
DASSAPA FRANCOIS CHANDRASEKAR (US)

International Classes:

G01J3/02; G01J3/30; G01J3/443; G01N21/00; G01N21/68; H01L; (IPC1-7): G01N21/00; G01J3/30

Foreign References:

US6069695A	2000-05-30
US20040045933A1	2004-03-11
US20020139925A1	2002-10-03

Other References: