Title:
METHOD AND APPARATUS FOR PRODUCING STRUCTURE, AND LIGHT IRRADIATION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/121950
Kind Code:
A1
Abstract:
Provided is a method for producing a structure, the method comprising a step of preparing a wafer that has at least a surface constituted of a group III nitride crystal and that is in a state immersed in an etching solution containing peroxodisulfate ion, and a step of irradiating the surface of the wafer with light through the etching solution. The group III nitride crystal has a composition for which the wavelength corresponding to the bandgap is greater than or equal to 310 nm. In the light irradiation step, the surface of the wafer is irradiated under a first irradiation condition with a first light having a wavelength of at least 200 nm and less than 310 nm, and is irradiated under a second irradiation condition which is regulated independently from the first irradiation condition with a second light having a wavelength of greater than or equal to 310 nm and less than the wavelength corresponding to the bandgap.
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Inventors:
HORIKIRI FUMIMASA (JP)
FUKUHARA NOBORU (JP)
FUKUHARA NOBORU (JP)
Application Number:
PCT/JP2019/047739
Publication Date:
June 18, 2020
Filing Date:
December 06, 2019
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/306; H01L21/308
Foreign References:
JP2007227450A | 2007-09-06 | |||
JPH08213358A | 1996-08-20 | |||
JP2009055056A | 2009-03-12 | |||
JP2004289032A | 2004-10-14 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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