Title:
METHOD FOR DETECTING OXIDE LAYER RADIATION-INDUCED DEFECTS IN ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/022509
Kind Code:
A1
Abstract:
Provided in the present invention is a method for detecting oxide layer radiation-induced defects in an electronic device, comprising the following steps: S100: selecting a semiconductor material to prepare a substrate; S200: preparing a back electrode on the upper surface of the substrate; S300: growing an oxide layer on the back electrode; S400: etching one side of the oxide layer, the etched part exposing the back electrode; S500: preparing a front electrode on the upper surface of the oxide layer; S600: disposing a plurality of trenches on the front electrode, the plurality of trenches being distributed in a grid shape, to obtain a test sample; and S700: performing an irradiation test on the test sample to detect radiation-induced defects. By means of the detection method of the present invention, a specific defect detection structure can be prepared on the oxide layer to implement rapid identification and detection of electrons and holes, achieving the objective of highly efficient and highly sensitive detection and determination of radiation-induced defects in the oxide layer.
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Inventors:
LI XINGJI (CN)
YANG JIANQUN (CN)
XU XIAODONG (CN)
LV GANG (CN)
CUI XIUHAI (CN)
YING TAO (CN)
WEI YADONG (CN)
YANG JIANQUN (CN)
XU XIAODONG (CN)
LV GANG (CN)
CUI XIUHAI (CN)
YING TAO (CN)
WEI YADONG (CN)
Application Number:
PCT/CN2021/108674
Publication Date:
February 03, 2022
Filing Date:
July 27, 2021
Export Citation:
Assignee:
HARBIN INST TECHNOLOGY (CN)
International Classes:
G01N23/02; H01L29/66
Foreign References:
| CN111855705A | 2020-10-30 | |||
| CN108346693A | 2018-07-31 | |||
| CN103822812A | 2014-05-28 | |||
| CN101727525A | 2010-06-09 | |||
| CN101814438A | 2010-08-25 | |||
| CN103871873A | 2014-06-18 |
Attorney, Agent or Firm:
TALENT PATENT&TRADEMARK FIRM (CN)
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